4 edition of Semiconductor heterostructure devices found in the catalog.
Includes bibliographies and index.
|Statement||[by Masayuki Abe, Naoki Yokoyama].|
|Series||Japanese technology reviews,, vol. 8., Electronics, Japanese technology reviews ;, vol. 8., Japanese technology reviews.|
|LC Classifications||TK7871.95 .A24 1989|
|The Physical Object|
|Pagination||xii, 96 p. :|
|Number of Pages||96|
|LC Control Number||89001713|
Semiconductor Device Physics and Design is comprehensive without being overwhelming. The focus was to make this a useful text book so that the information contained is cohesive without including all aspects of device physics. The lesson plans demonstrated how this book could be used in a 1 semester or 2 quarter sequence. A heterostructure or junction is defined as the interfacial union of two or more components. In photocatalysis, heterounions are formed to improve the efficiency of a semiconductor either by redshifting the light absorption or through the decrease of the recombination of the hole-electron pairs [12, 17, 18].Heterostructures are commonly built up by combining a specific semiconductor with one Author: Raquel Del Angel, Juan C. Durán-Álvarez, Rodolfo Zanella.
The book details the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices. The emphasis is on heterostructure devices of. Key issues for the realization of those devices involve the superior mobility and optical properties of III-V materials (i.e., nitride-, phosphide-, and arsenide-related heterostructure systems). Further, the developed epitaxial growth technique enables electronic carrier control through the formation of quantum structures and precise doping Cited by: 9.
Writing a book on Semiconductor Device Physics and Design is never complete and proba-bly never completely satisfying. The ﬁeld is vast and diverse and it is difﬁcult to decide what should be included in the book and what should not be. Of course it is always a good idea for. SiGe HBT circuits, as part of the CMOS technology on eight-inch wafers, are in volume production. Simulation tools for technology, devices, and circuits reduce expensive technological efforts. This book focuses on the application of simulation software to heterostructure devices with Brand: Springer-Verlag Wien.
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Semiconductor heterostructure devices, such as Heterojunction Bipolar Transistors (HBTs) and High Electron Mobility Transistors (HEMTs), are among the fastest and. Additional Physical Format: Online version: Abe, Masayuki. Semiconductor heterostructure devices.
New York: Gordon and Breach Science Publishers, © In total, Semiconductor Physics And Devices contains 10 of the chapters in this book include Nonequilibrium Excess Carriers In Semiconductors, p-n Junction Diode And Semiconductor Heterostructure, Special Semiconductor Devices And Advance Processes, Introduction To The Quantum Theory Of Solids, and Physics And Crystal Properties Of Semiconductors.
“The book covers a wide spectrum of topics that are fundamental for modelling and simulation of semiconductor electron devices. It is addressed to undergraduate and graduate students in mathematics and electrical engineering as well as researchers who would like to get different perspectives on the subject.
Format: Paperback. The multidisciplinary nature of nanotechnology is reported in \, while the dynamic interplay among growth/synthesis techniques, theoretical modeling, and characterization techniques in the design and improvement of semiconductor heterostructure-based devices is discussed in \.
\ reports the purposes of the book and the layout of the chapters. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices - Kindle edition by Cressler, John D. Download it once and read it on your Kindle device, PC, phones or tablets. Use features like bookmarks, note taking and highlighting while reading SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices.5/5(1).
The book contains many homework exercises at the end of each chapter, and a solution manual can be obtained for instructors. Emphasizing the development of new technology, Theory of Modern Electronic Semiconductor Devices is an ideal companion to electrical and computer engineering graduate level courses and an essential reference for.
High Speed Heterostructure Devices. Edited by Richard A. Kiehl, T.C.L. Gerhard Sollner. Vol Download PDFs Export citations. Receive an update when the latest chapters in this book series are published.
Sign in to set up alerts. select article Series Editor. GaAS-Gate Semiconductor–Insulator–Semiconductor FET. Paul Solomon. Semiconductor devices, the basic components of integrated circuits, are responsible for the rapid growth of the electronics industry over the past fifty years.
Because there is a growing need for faster and more complex systems for the information age, existing semiconductor devices are constantly being studied for improvement, and new ones are. Characterization of Semiconductor Heterostructures and Nanostructures” is structured so that each chapter is devoted to a specific characterization technique used in the understanding of the properties (structural, physical, chemical, electrical etc.) of semiconductor quantum wells and superlattices.
The first true "introduction" to semiconductor optoelectronic devices, this book provides an accessible, well-organized overview of optoelectric devices that emphasizes basic principles. Coverage begins with an optional review of key concepts— such as properties of compound semiconductor, quantum mechanics, semiconductor statistics, carrier transport properties, optical processes, and Reviews: 2.
Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well as optoelectronic components.
The book provides an overview, characteristics, and derivative applications for each device covered. High-Speed Heterostructure Devices describes modern high-speed semiconductor devices intended for both graduate students and practicing engineers.
The book details the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices. The emphasis is on heterostructure devices of the immediate future such as the Cited by: Communication and information systems are subject to rapid and highly so phisticated changes.
Currently semiconductor heterostructure devices, such as Heterojunction Bipolar Transistors (HBTs) and High Electron Mobility Transis tors (HEMTs), are among the fastest and most advanced high-frequency devices.
They satisfy the requirements for low power consumption, medium integration, low cost in 5/5(1). The second part of the book (Chapters 12 – 20) applies these principles to semiconductor devices and discusses the density of states, semiconductor statistics, carrier concentrations, doping, tunneling, and some aspects of heterostructure devices.
The book may be of particular interest to individuals working in the fields of microelectronics /5(3). Written for graduate students and practicing engineers, this book describes modern high-speed semiconductor devices. The book details the underlying physics of heterostructures, as well as some of the most recent techniques for modeling and simulating these devices.
The book focuses on heterostructure devices such as MODFET, HBT, and RTD. Though these devices are the subject of a vigorous research effort, the current literature is often either highly technical or narrowly focused.
This book presents heterostructure and quantum devices to the nonspecialist, especially electrical engineers working with high-performance semiconductor devices. High-Speed Heterostructure Devices describes modern high-speed semiconductor devices intended for both graduate students and practicing engineers.
The book details the underlying physics of heterostructures as well as some of the most recent techniques for 5/5(1). Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices.
The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for.
High-Speed Heterostructure Devices describes modern high-speed semiconductor devices intended for both graduate students and practicing engineers.
The book details the underlying physics of heterostructures as well as some of the most recent techniques for. The summaries in this volume provide timely insights into what we know now about selected areas of advanced semiconductor heterostructures and also provide foundations for further developments.
Contents: Novel Heterostructure Devices: Electron–Phonon Interactions in Intersubband Laser Heterostructures (M V Kisin et al.). This is part of my series on semiconductor physics (often called Electronics 1 at university).
This is based on the book Semiconductor Physics and Devices by. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art.
Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that : John D.